dg858dw45 1/7 features l double side cooling l high reliability in service l high voltage capability l fault protection without fuses l high surge current capability l turn-off capability allows reduction in equipment size and weight. low noise emission reduces acoustic cladding necessary for environmental requirements applications l variable speed a.c. motor drive inverters (vsd-ac). l uninterruptable power supplies l high voltage converters. l choppers. l welding. l induction heating. l dc/dc converters. key parameters i tcm 3000a v drm 4500v i t(av) 1100a dv d /dt 750v/ m s di t /dt 300a/ m s fig.1 package outline package outline type code : w see package details for further information. voltage ratings 4500 dg858dw45 conditions type number t vj = 125 o c, i drm =100ma, i rrm = 50ma repetitive peak off-state voltage v drm v repetitive peak reverse voltage v rrm v 16 current ratings symbol parameter conditions max. i tcm v d = v drm , t j = 125 o c, di gq /dt = 40a/ ms, cs = 4.0 m f, l s 200nh a 3000 units repetitive peak controllable on-state current t hs = 80 o c. double side cooled, half sine 50hz. rms on-state current a a 1100 1720 t hs = 80 o c. double side cooled, half sine 50hz. i t(rms) i t(av) mean on-state current dg858dw45 gate turn-off thyristor ds4334-5 july 2014 (ln31737)
dg858dw45 2/7 surge ratings conditions 20.0 2.0 x 10 6 ka a 2 s surge (non-repetitive) on-state current i 2 t for fusing 10ms half sine. t j = 125 o c 10ms half sine. t j =125 o c di t /dt critical rate of rise of on-state current 300 20 v/ ms max. units rate of rise of off-state voltage peak stray inductance in snubber circuit dv d /dt 200 nh 750 v/ m s to 66% v drm ; v rg = -2v, t j = 125 o c i tsm symbol parameter i 2 t v d = 3000v, i t = 3000a, t j =125 o c i fg > 40a, rise time < 1.0 ms a/ ms to 66% v drm ; r gk 22 w , t j = 125 o c l s i t = 3000a, v d = v drm , t j = 125c, di gq /dt = 40a/ m s, cs = 4.0 mf gate ratings symbol parameter conditions v units max. 16 20 min. - 20 - peak reverse gate voltage peak forward gate current average forward gate power peak reverse gate power rate of rise of reverse gate current minimum permissable on time minimum permissable off time 24 60 -50 20 - - m s 100 100 v rgm this value maybe exceeded during turn-off i fgm p fg(av) p rgm di gq /dt t on(min) t off(min) ms a/ ms kw w a thermal and mechanical data symbol parameter conditions max. min. r th(c-hs) contact thermal resistance r th(j-hs) - - 0.03 - 0.0021 o c/w per contact cathode side cooled double side cooled units - 0.011 o c/w anode side cooled o c/w 0.017 virtual junction temperature t op /t stg operating junction/storage temperature range - clamping force -40 125 44.0 36.0 -40 kn o c/w clamping force 40kn with mounting compound dc thermal resistance - junction to heatsink surface t vj 125 o c o c
dg858dw45 3/7 characteristics conditions peak reverse current on-state voltage v tm peak off-state current reverse gate cathode current 50 - turn-on energy gate trigger current delay time rise time fall time gate controlled turn-off time turn-off energy storage time turn-off gate charge total turn-off gate charge peak reverse gate current - 12500 v rgm = 16v, no gate/cathode resistor mc i t = 3000a, v dm = 4200v snubber cap cs = 4.0 mf, di gq /dt = 40/ ms t j = 125 o c unless stated otherwise symbol parameter i dm i rrm v gt gate trigger voltage i gt i rgm e on t d t r e off t gs t gf t gq q gq q gqt i gqm min. max. units at 3000a peak, i g(on) = 10a d.c. - 3.85 v v drm = 4500v, v rg = 2v - 100 ma at v rrm -50ma v d = 24v, i t = 100a, t j = 25 o c - 1.2 v v d = 24v, i t = 100a, t j = 25 o c - 4.0 a ma mj 4400- v d = 2000v i t = 3000a, di t /dt = 300a/ ms i fg = 40a, rise time < 1.0 ms m s2.0- - 6.0 ms - 12500 mj -26 m s m s 2.5- m s28.5- - 25000 mc - 950 a conditions limit v dc = 3500v, t j = -40 to + 125c, ambient cosmic radiation at sea level, in open air, 100% duty cycle. units 100 fit dc blocking reliability reliability
dg858dw45 4/7 curves 1.5 2.0 2.5 3.0 3.5 instantaneous on-state voltage v tm - (v) 1000 2000 3000 4000 instantaneous on-state current i t - (a) measured under pulse conditions. i g(on) = 10a half sine wave 10ms 0 4.0 1.0 t j = 125c t j = 25c figure 2. on-state characteristics
dg858dw45 5/7 recommended gate conditions: i tcm = 3000a i fg = 40a i g(on) = 10a d.c. t w1(min) = 20s i gqm = 1200a di gq /dt = 40a/s q gq = 12500c v rg(min) = 2v v rg(max) = 18v anode voltage and current v d 0.9v d 0.1v d t d t r t gt i t v dp 0.9i t i tail dv d /dt v d v dm gate voltage and current t gs t gf t w1 v fg i fg 0.1i fg di fg /dt 0.1i gq q gq 0.5i gqm i gqm v rg v (rg)br i g(on) t gq these are recommended dynex semiconductor conditions. other conditions are permitted according to users gate drive specifications. figure 3. general switching waveforms
dg858dw45 6/7 package details for further package information, please contact your local customer service centre. all dimensions in mm, unless stated otherwise. do not scale. 72 max ?84.6 nom ?84.6 nom ?120 max 27.0 25.5 cathode anode gate connector ?3.0 auxiliary cathode connector ?3.0 12 2 holes ?3.6 x 2.0 deep (one in each electrode) nominal weight: 1700g package outline type code: w associated literature/products publication no. title/part number an4571 application note - gdu9x-xxxxx series gto gate drive units. ds4567 gdu90-20721 gto gate drive unit. ds4568 gdu90-20722 gto gate drive unit. ds4150 dsf8045sk - snubber diode. ds4153 dsf21545sv - antiparallel/freewheel diode.
important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographica l errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. the annotations are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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